DS1270W-100IND【PDF 2/8 页】IC NVSRAM 16MBIT 100NS 36DIP

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DS1270W

READ MODE

The DS1270 devices execute a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip

Enable) and OE (Output Enable) are active (low). The unique address specified by the 21 address inputs

(A 0 –A 20 ) defines which of the 2,097,152 bytes of data is accessed. Valid data will be available to the

eight data output drivers within t ACC (Access Time) after the last address input signal is stable, providing

that CE and OE (Output Enable) access times are also satisfied. If OE and CE access times are not

satisfied, then data access must be measured from the later-occurring signal ( CE or OE ) and the limiting

parameter is either t CO for CE or t OE for OE rather than t ACC .

WRITE MODE

The DS1270 devices execute a write cycle whenever WE and CE signals are active (low) after address

inputs are stable. The later-occurring falling edge of CE or WE will determine the start of the write cycle.

The write cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be kept

valid throughout the write cycle. WE must return to the high state for a minimum recovery time (t WR )

before another cycle can be initiated. The OE control signal should be kept inactive (high) during write

cycles to avoid bus contention. However, if the output drivers are enabled ( CE and OE active), then WE

will disable the outputs in t ODW from its falling edge.

DATA-RETENTION MODE

The DS1270W provides full-functional capability for V CC greater than 3.0V and write protects by 2.8V.

Data is maintained in the absence of V CC without any additional support circuitry. The nonvolatile static

RAMs constantly monitor V CC . Should the supply voltage decay, the NV SRAMs automatically write

protect themselves, all inputs become don’t care, and all outputs become high-impedance. As V CC falls

below approximately 2.5V, a power-switching circuit connects the lithium energy source to RAM to

retain data. During power-up, when V CC rises above approximately 2.5V, the power-switching circuit

connects external V CC to RAM and disconnects the lithium energy source. Normal RAM operation can

resume after V CC exceeds 3.0V.

FRESHNESS SEAL

Each DS1270 device is shipped from Maxim with its lithium energy source disconnected, guaranteeing

full energy capacity. When V CC is first applied at a level greater than V TP , the lithium energy source is

enabled for battery backup operation.

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DS1270W-100IND# 功能描述:NVRAM 3.3V 16M NV SRAM RoHS:否制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube

DS1270W-150 功能描述:NVRAM 3.3V 16M NV SRAM RoHS:否制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube

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DS1270Y-100 功能描述:NVRAM 16M NV SRAM RoHS:否制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube

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DS1270Y-70 功能描述:NVRAM 16M NV SRAM RoHS:否制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube

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